VISHAY · FETs & Power MOSFETs · MPN SIHB24N65EFT1-GE3
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| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 128pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 156mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.774nF |
| Type | N-Channel |
650V 24A 4V 250W 156mΩ@10V 1 N-channel N-Channel TO-263(D2PAK) Single FETs, MOSFETs RoHS