VISHAY · FETs & Power MOSFETs · MPN SIHB23N60E-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 158mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.418nF |
600V 23A 4V 227W 158mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS