VISHAY · FETs & Power MOSFETs · MPN SIHB22N60AE-GE3
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| Gate Charge(Qg) | 96nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 179W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.451nF |
600V 12A 4V 179W 180mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS