VISHAY · FETs & Power MOSFETs · MPN SIHB21N65EF-GE3
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 14nC@10V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.322nF |
| Type | N-Channel |
650V 21A 4V 208W 180mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS