VISHAY · FETs & Power MOSFETs · MPN SIHB20N50E-GE3
No reviews yet — be the first to review VISHAY SIHB20N50E-GE3.
| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 92nC@10V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 179W |
| RDS(on) | 184mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
500V 19A 4V 179W 184mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS