VISHAY · FETs & Power MOSFETs · MPN SIHB18N60E-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 92nC@10V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 179W |
| RDS(on) | 202mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.64nF |
600V 18A 2V 179W 202mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS