VISHAY · FETs & Power MOSFETs · MPN SIHB150N60E-GE3
No reviews yet — be the first to review VISHAY SIHB150N60E-GE3.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 22A |
| Output Capacitance(Coss) | 60pF |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 179W |
| RDS(on) | 158mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Input Capacitance(Ciss) | 1.514nF |
| Type | N-Channel |
600V 22A 5V 179W 158mΩ@10V N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS