VISHAY · FETs & Power MOSFETs · MPN SIHB12N60E-GE3
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 58nC@10V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 7.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 147W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 937pF |
| Type | N-Channel |
N-Channel 600V 7.8A 147W Surface Mount D2PAK(TO-263)