VISHAY · FETs & Power MOSFETs · MPN SIHB12N50E-GE3
No reviews yet — be the first to review VISHAY SIHB12N50E-GE3.
| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 886pF |
| Type | N-Channel |
500V 10.5A 4V 114W 380mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS