VISHAY · FETs & Power MOSFETs · MPN SIHB12N50C-E3
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 555mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.375nF |
500V 7.5A 3V 208W 555mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS