VISHAY · FETs & Power MOSFETs · MPN SIHB10N40D-GE3
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| Drain to Source Voltage | 400V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 147W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 526pF |
400V 5V 147W 600mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS