VISHAY · FETs & Power MOSFETs · MPN SIHB105N60EF-GE3
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| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 82pF |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 102mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.804nF |
| Type | N-Channel |
600V 29A 5V 208W 102mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS