VISHAY · FETs & Power MOSFETs · MPN SIHB100N60E-GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 208W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.851nF |
600V 19A 3V 208W 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS