VISHAY · FETs & Power MOSFETs · MPN SIHB068N60EF-GE3
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| Output Capacitance(Coss) | 122pF |
|---|---|
| Pd - Power Dissipation | 250W |
| Gate Charge(Qg) | 77nC |
| Configuration | - |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 59mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.628nF |
250W 600V 3V 59mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS