VISHAY · FETs & Power MOSFETs · MPN SIHA6N80AE-GE3
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 22.5nC@10V |
| Output Capacitance(Coss) | 24pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 950mΩ@10V |
| Input Capacitance(Ciss) | 422pF |
| Type | N-Channel |
800V 10A 4V 30W 950mΩ@10V N-Channel TO-220-3 Single FETs, MOSFETs RoHS