VISHAY SIHA21N60EF-E3

VISHAY · FETs & Power MOSFETs · MPN SIHA21N60EF-E3

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Specifications

Gate Charge(Qg)84nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)176mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.03nF
TypeN-Channel

Technical details

N-Channel 600V 14A 35W Through Hole TO-220F-3

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