VISHAY · FETs & Power MOSFETs · MPN SIHA15N80AE-GE3
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| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 49pF |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.093nF |
| Type | N-Channel |
800V 29A 4V 33W 350mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS