VISHAY SIHA12N60E-E3

VISHAY · FETs & Power MOSFETs · MPN SIHA12N60E-E3

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)58nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)937pF
TypeN-Channel

Technical details

N-Channel 600V 12A 33W Through Hole TO-220

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