VISHAY · FETs & Power MOSFETs · MPN SIE808DF-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5.2W;125W |
| Reverse Transfer Capacitance (Crss@Vds) | 600pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.8nF |
20V 60A 3V 1.6mΩ@10V 1 N-channel PolArPAK-10 Single FETs, MOSFETs RoHS