VISHAY · FETs & Power MOSFETs · MPN SIE802DF-T1-GE3
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 5.2W;125W |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
30V 60A 2.7V 1.9mΩ@10V 1 N-channel PolArPAK-10 Single FETs, MOSFETs RoHS