VISHAY · FETs & Power MOSFETs · MPN SIDR870ADP-T1-GE3
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 10.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.866nF |
| Type | N-Channel |
100V 95A 3V 4W 10.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS