VISHAY SIDR680ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIDR680ADP-T1-RE3

No reviews yet — be the first to review VISHAY SIDR680ADP-T1-RE3.

Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)614pF
Current - Continuous Drain(Id)137A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)3.5mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)4.415nF
TypeN-Channel

Technical details

80V 137A 3.5V 125W 3.5mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs