VISHAY · FETs & Power MOSFETs · MPN SIDR668DP-T1-RE3
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| Gate Charge(Qg) | 108nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 23.2A;95A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 6.25W;125W |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
100V 3.4V 4.8mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS