VISHAY · FETs & Power MOSFETs · MPN SIDR638DP-T1-GE3
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 0.88mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.5nF |
N-Channel 40V 100A 6.25W Surface Mount SO-8