VISHAY SIDR626LEP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIDR626LEP-T1-RE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)135nC@10V
Output Capacitance(Coss)1.34nF
Current - Continuous Drain(Id)218A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)2.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.9nF
TypeN-Channel

Technical details

N-Channel 60V 218A 125W Surface Mount PowerPAK-SO-8DC

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