VISHAY · FETs & Power MOSFETs · MPN SIDR626EP-T1-RE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Output Capacitance(Coss) | 1.19nF |
| Current - Continuous Drain(Id) | 50.8A;227A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 7.5W;150W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 1.74mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.13nF |
| Type | N-Channel |
N-Channel 60V 50.8A 227A 7.5W 150W PowerPAKSO-8DC