VISHAY · FETs & Power MOSFETs · MPN SIDR626DP-T1-RE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Current - Continuous Drain(Id) | 42.8A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 6.25W;125W |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.13nF |
60V 3.4V 1.7mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS