VISHAY SIDR622DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIDR622DP-T1-RE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)41nC@10V
Current - Continuous Drain(Id)64.6A;56.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6.25W;125W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)17.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.516nF

Technical details

N-Channel 150V 64.6A 56.7A 6.25W 125W PowerPAKSO-8DC

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