VISHAY · FETs & Power MOSFETs · MPN SIDR622DP-T1-GE3
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 56.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 20.4mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.516nF |
| Type | N-Channel |
150V 56.7A 4.5V 80W 20.4mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS