VISHAY · FETs & Power MOSFETs · MPN SIDR610EP-T1-RE3
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 8.9A;39.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 7.5W;150W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 31.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
200V 2V 31.9mΩ@10V 1 N-channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS