VISHAY · FETs & Power MOSFETs · MPN SIDR610DP-T1-GE3
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 8.9A;39.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 6.25W;125W |
| RDS(on) | 31.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
200V 4V 31.9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS