VISHAY · FETs & Power MOSFETs · MPN SIDR608DP-T1-RE3
No reviews yet — be the first to review VISHAY SIDR608DP-T1-RE3.
| Gate Charge(Qg) | 76nC@4.5V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 208A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 1.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.9nF |
| Type | N-Channel |
45V 208A 2.3V 104W 1.8mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS