VISHAY SIDR578EP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIDR578EP-T1-RE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)49nC@10V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)78A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)6.8pF
RDS(on)10mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.54nF
TypeN-Channel

Technical details

N-Channel 150V 78A 150W Surface Mount PowerPAKSO-8

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