VISHAY · FETs & Power MOSFETs · MPN SIDR5102EP-T1-RE3
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 28.2A;126A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 7.5W;150W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
100V 4V 4.1mΩ@10V 1 N-channel SO-8DC Single FETs, MOSFETs RoHS