VISHAY · FETs & Power MOSFETs · MPN SIDR500EP-T1-RE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 180nC@10V |
| Current - Continuous Drain(Id) | 94A;421A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 7.5W;150W |
| RDS(on) | 0.47mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.96nF |
30V 2.2V 0.47mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS