VISHAY · FETs & Power MOSFETs · MPN SIDR402EP-T1-RE3
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 291A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 1.16mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.1nF |
| Type | N-Channel |
40V 291A 2.3V 150W 1.16mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS