VISHAY · FETs & Power MOSFETs · MPN SIDR392DP-T1-RE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 188nC@10V |
| Current - Continuous Drain(Id) | 82A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 6.25W;125W |
| Reverse Transfer Capacitance (Crss@Vds) | 626pF |
| RDS(on) | 0.62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.53nF |
30V 2.2V 0.62mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS