VISHAY · FETs & Power MOSFETs · MPN SIDR392DP-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 125nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 626pF |
| RDS(on) | 0.62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.53nF |
| Type | N-Channel |
N-Channel 30V 100A 125W Surface Mount PowerPAK-SO-8DC