VISHAY · FETs & Power MOSFETs · MPN SIDR220DP-T1-GE3
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 61nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 134pF |
| RDS(on) | 0.82mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.85nF |
| Type | N-Channel |
25V 100A 2.1V 125W 0.82mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS