VISHAY · FETs & Power MOSFETs · MPN SIB912DK-T1-GE3
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| Gate Charge(Qg) | 3nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 24pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 375mΩ@1.8V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 95pF |
| Type | N-Channel |
N-Channel Array 20V 1.5A 3.1W Surface Mount PowerPAK-SC-75-6L