VISHAY · FETs & Power MOSFETs · MPN SIB457EDK-T1-GE3
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| Gate Charge(Qg) | 13nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 35mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
20V 6.8A 400mV 2.4W 35mΩ@4.5V 1 P-Channel PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS