VISHAY · FETs & Power MOSFETs · MPN SIB456DK-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Configuration | Full-Bridge |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 13W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
100V 6.3A 3V 13W 1 N-channel N-Channel PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS