VISHAY · FETs & Power MOSFETs · MPN SIB452DK-T1-GE3
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| Gate Charge(Qg) | 6.5nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 190V |
| Output Capacitance(Coss) | 9pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 13W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 6Ω@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
190V 1.5A 1.5V 13W 6Ω@1.8V 1 N-channel N-Channel PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS