VISHAY SIB441EDK-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIB441EDK-T1-GE3

No reviews yet — be the first to review VISHAY SIB441EDK-T1-GE3.

Specifications

Gate Charge(Qg)13.4nC@8V
Drain to Source Voltage12V
Output Capacitance(Coss)265pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)25.5mΩ@3.7V
Number1 P-Channel
Input Capacitance(Ciss)1.18nF
TypeP-Channel

Technical details

P-Channel 12V 9A 2.4W Surface Mount PowerPAK-SC-75-6L-Single

Related FETs & Power MOSFETs