VISHAY · FETs & Power MOSFETs · MPN SIB4317EDK-T1-GE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.3A;4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.95W;10W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 600pF |
30V 600mV 65mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS