VISHAY · FETs & Power MOSFETs · MPN SIB4316EDK-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 4.5A;6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.9W;10W |
| RDS(on) | 57mΩ@10V |
| Number | 1 N-channel |
30V 1.4V 57mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS