VISHAY · FETs & Power MOSFETs · MPN SIB422EDK-T4-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 7.1A;9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 2.5W;13W |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 N-channel |
20V 400mV 30mΩ@4.5V 1 N-channel SC-75-6 Single FETs, MOSFETs RoHS