VISHAY · FETs & Power MOSFETs · MPN SIB406EDK-T1-GE3
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| Gate Charge(Qg) | 3.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.95W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 46mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
20V 6A 1.4V 1.95W 46mΩ@4.5V 1 N-channel PowerPAK-SC-75-6L Single FETs, MOSFETs RoHS