VISHAY SIAA40DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIAA40DJ-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage-
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.09nF

Technical details

40A 2.5V 3.5W 1 N-channel SC-70-6 Single FETs, MOSFETs RoHS

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