VISHAY SIAA02DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIAA02DJ-T1-GE3

No reviews yet — be the first to review VISHAY SIAA02DJ-T1-GE3.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10.2nC@10V
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation19W
RDS(on)16.2mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)75pF
Number1 N-channel
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

N-Channel 20V 52A 19W Surface Mount PowerPAKSC-70-6

Related FETs & Power MOSFETs